DMN601TK-7

$0.30

Description：MOSFET N-CH 60V 300MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:761aaf8fbd57 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 300MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Download product information

DMN601TK-7

Overview

The DMN601TK-7 is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 300mA at 25°C ambient temperature. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 2Ω at V_GS = 10V and I_D = 0.5A, or 3Ω at V_GS = 5V and I_D = 0.05A. Total power dissipation is rated at 150mW with a thermal resistance (R_θJA) of 833°C/W. The gate-source threshold voltage (V_GS(TH)) ranges from 1.0V to 2.5V. Input capacitance is 50pF. The component operates within a junction temperature range of -65°C to +150°C and is housed in an SOT523 surface-mount package.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features low gate threshold voltage and low input capacitance for fast switching speed.
Includes internal ESD protection up to 2kV and built-in gate protection diode.
Qualified to JEDEC standards for high reliability and fully RoHS compliant.

Applications

Motor controls
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the required operating environment aligns with the specified thermal characteristics and junction temperature limits. Ensure design compatibility with the SOT523 package dimensions and suggested pad layout provided in the mechanical data section of the datasheet.

Selection Notes

Select this component for low-voltage, low-current switching tasks requiring compact footprint integration. The 60V rating suits general-purpose logic-level control circuits. Evaluate the 150mW power dissipation limit against expected thermal loads. Consider the 2Ω R_DS(ON) specification when designing for minimal conduction losses in battery-powered or portable devices.

Part Context

This part belongs to the DMN601 series of N-channel MOSFETs from Diodes Incorporated. It serves as a standard discrete semiconductor solution for small-signal switching. The DMN601TK variant specifically utilizes the SOT523 package, distinguishing it from other pinout or package configurations within the broader product family designed for similar electrical performance profiles.

Replacement Considerations

Consult official manufacturer documentation for qualified automotive alternatives such as the DMN601TKQ. Verify pinout compatibility and electrical parameter overlaps before substituting with generic equivalents.