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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.305A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN601VK-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 305mA at 25°C. The device offers a maximum static drain-source on-resistance of 2.0Ω at VGS=10V and 3.0Ω at VGS=4.5V. Total power dissipation is rated at 250mW with a thermal resistance junction-to-ambient of 500°C/W. The component operates within a temperature range of -65°C to +150°C and is housed in an SOT563 surface-mount package.
Feature Summary
- Dual N-channel configuration for compact circuit design
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protection up to 2kV
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the SOT563 package dimensions align with the target PCB footprint requirements. Ensure the selected components meet the required RoHS and halogen-free compliance standards as specified in the manufacturer's documentation.
Selection Notes
Select this component when a dual N-channel MOSFET is required in an ultra-small surface-mount package. The device is suitable for applications demanding low gate threshold voltage and fast switching performance. Consider the 250mW power dissipation limit and 500°C/W thermal resistance for adequate heat management in the final assembly.
Part Context
This part belongs to the DMN601 series of dual N-channel enhancement mode field effect transistors from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN601VK variant specifically utilizes the SOT563 package for space-constrained designs.
Replacement Considerations
The automotive-compliant version DMN601VKQ is available under a separate datasheet. Verify pinout compatibility and electrical parameter tolerances before substituting with other dual N-channel MOSFETs in the SOT563 package.
