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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN601WK-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 300 mA at +25°C ambient temperature. The device offers a maximum static drain-source on-resistance (Rds(on)) of 2.0 Ω at Vgs = 10 V and 3.0 Ω at Vgs = 4.5 V. Total power dissipation is rated at 200 mW, with an operating junction temperature range from -65°C to +150°C. The component utilizes a SOT-323 package.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to JEDEC standards for high reliability
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the required part meets AEC-Q101 automotive reliability standards by selecting the separate DMN601WKQ variant if necessary. Ensure compliance with RoHS and halogen-free requirements as defined in the manufacturer's documentation.
Selection Notes
Select this component for applications requiring a compact single N-channel MOSFET with a 60 V breakdown voltage. The SOT-323 package provides space efficiency for portable electronics. Consider the 200 mW power dissipation limit and thermal resistance when designing heat management solutions for continuous operation.
Part Context
This component belongs to the DMN601 family of N-channel enhancement mode field-effect transistors produced by Diodes Incorporated. The product line includes variants such as the dual-channel DMN601DWK-7 and the automotive-grade DMN601WKQ-13. All parts share similar electrical characteristics but differ in package type, channel configuration, and qualification standards.
Replacement Considerations
Direct replacements include the DMN601WKQ-13 for automotive-grade requirements or the DMN601LTQ-7 for SOT-523 packaging compatibility. Verify pinout alignment and thermal performance before substituting.
