DMN601WKQ-7

$0.31

Description：MOSFET N-CH 60V 300MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:65bf5f31e624 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 300MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN601WKQ-7

Overview

The DMN601WKQ-7 is an N-channel enhancement mode MOSFET in a SOT323 package. It features a drain-source voltage of 60V and a continuous drain current of 300mA at +25°C. The maximum on-resistance is 2.0Ω at VGS=10V and 3.0Ω at VGS=4.5V. Gate-source voltage is ±20V, with a threshold voltage of 2.5V max. Power dissipation is 200mW, operating temperature ranges from -65°C to +150°C, and thermal resistance is 625°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
PPAP capable and manufactured in IATF 16949 certified facilities
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the datasheet to confirm the correct packing quantity and carrier type. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your specific automotive application requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds within a compact SOT323 footprint. Ensure the design accounts for the 200mW power dissipation limit and the 625°C/W thermal resistance when determining heat management strategies under continuous load conditions.

Part Context

This part belongs to the DMN601WKQ family of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements, offering high reliability through its AEC-Q101 qualification and manufacturing in IATF 16949 certified facilities.