DMN6040SE-13

$0.55

Description：MOSFET BVDSS: 41V 60V SOT223 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:11f9c7192fc8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V 60V SOT223 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

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DMN6040SE-13

Overview

The DMN6040SE-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 40mΩ at VGS=10V and 55mΩ at VGS=4.5V. Continuous drain current (ID) is rated at 5.0A at +25°C and 4.0A at +70°C, with a pulsed drain current (IDM) capability of 30A. Total gate charge (Qg) is typically 22.4nC at VGS=10V. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Subjected to 100% Unclamped Inductive Switch (UIS) testing during production to ensure robustness against inductive load failures.

Applications

Motor controls
Transformer driving switches
DC-DC converters
Power-management functions
Uninterrupted power supply

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2,500 units per carrier. Confirm that the SOT223 package dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS directives and Halogen-free specifications if required by the end-product design standards.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for compact designs. The SOT223 package provides a balance between thermal dissipation and board space efficiency. Consider the 40mΩ RDS(ON) specification at VGS=10V for standard logic-level drive applications requiring minimal conduction losses.

Part Context

This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on optimizing the trade-off between conduction losses and switching speed. The DMN6040SE variant specifically utilizes the SOT223 surface-mount package, distinguishing it from other pinout or package configurations within the broader product family.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on matching electrical parameters without verifying pinout compatibility and thermal characteristics.

FAQ

Is the DMN6040SE-13 qualified for automotive applications?

For automotive applications requiring specific change control, parts must be qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities. Contact Diodes Incorporated directly for these specific variants.