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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5.3A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMN6040SFDEQ-7 is a 60V N-channel enhancement mode MOSFET in a U-DFN2020-6 (Type E) package. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.3A at +25°C. The on-resistance is 38mΩ max at VGS=10V and 47mΩ max at VGS=4.5V. Gate-source voltage is ±20V, with a threshold voltage range of 1V to 3V. Total gate charge is 22.4nC at VGS=10V. Thermal resistance junction-to-ambient is 189°C/W steady state. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive high reliability applications
- 100% Unclamped Inductive Switch (UIS) tested in production
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
- PPAP capable for automotive supply chain requirements
Applications
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification level and PPAP documentation needs for your specific automotive application context. Ensure the U-DFN2020-6 footprint matches your PCB layout guidelines.
Selection Notes
Select this component when a low-profile 0.6mm height solution is required for space-constrained designs. Consider the 4mm² PCB footprint for compact layouts. Evaluate the thermal performance based on your copper plate area, as thermal resistance varies significantly between minimum pad layouts and larger heat-sinking configurations.
Part Context
This device belongs to the DMN6040 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a silicon gate technology designed for high efficiency and fast switching. The U-DFN2020-6 package provides a compact form factor suitable for surface mount assembly processes.
Replacement Considerations
Check datasheets for other DMN6040 variants such as DMN6040SK3 or DMN6040SSD to compare pinouts and electrical ratings. Verify package compatibility before substitution, as different packages like TO-252 or SOIC have distinct mechanical dimensions and thermal characteristics.
