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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1287pF @ 25V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN6040SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at +25°C, extending to 6.6A for short durations. The device offers a low on-resistance of 40mΩ at VGS=10V and 55mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount case, it provides a total power dissipation of 1.7W under thermal bias conditions and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed to minimize on-state resistance while maintaining superior switching performance.
- Qualified to AEC-Q101 standards for high reliability in automotive applications.
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green molding compound.
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, including the absence of intentionally added lead and compliance with EU directives regarding restricted substances. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component for designs requiring efficient power management where low conduction losses are critical. The dual N-channel architecture allows for compact implementation in bridge or half-bridge topologies. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure the junction temperature remains within safe limits during steady-state and transient operations.
Part Context
This part belongs to the DMN6040 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 plastic package with tin-finished annealed copper leadframes. The device is distinct from its automotive-compliant counterpart, the DMN6040SSDQ, which is documented under a separate datasheet but shares similar electrical parameters.
Replacement Considerations
The DMN6040SSDQ is the automotive-compliant version of this component. Verify if the application requires AEC-Q101 qualification before substituting between these variants.
