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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1287pF @ 25V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN6040SSDQ-13 is a dual N-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of 60V and continuous drain current ratings of 5.0A at +25°C and 6.6A for short durations. The maximum on-resistance is 40mΩ at VGS=10V and 55mΩ at VGS=4.5V. Total gate charge is 22.4nC at VGS=10V. Power dissipation reaches 1.7W with a thermal resistance of 75°C/W under specific board conditions. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability
- Designed to minimize on-state resistance while maintaining superior switching performance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the ordering suffix Q-13 corresponds to the tape and reel packaging configuration specified in the official datasheet. Confirm that the component meets AEC-Q101 automotive qualification requirements if intended for such environments. Ensure the SO-8 package dimensions align with the target PCB footprint layout guidelines provided by the manufacturer.
Selection Notes
Select this component for applications requiring low input capacitance and fast switching speeds within a 60V system. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the final design. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on across varying load conditions.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed for high-efficiency power management. It integrates two isolated N-channel enhancement mode transistors into a single surface-mount package. The device utilizes silicon technology optimized for minimizing conduction losses without compromising switching dynamics.
Replacement Considerations
DMN6040SSD-13
FAQ
What is the maximum steady-state continuous drain current?
The maximum steady-state continuous drain current is 5.0A at an ambient temperature of +25°C.
Is the device suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable for automotive use.
What is the typical total gate charge at VGS = 10V?
The typical total gate charge is 22.4nC when tested at VDS = 30V and ID = 4.3A.
