DMN6040SVT-7

$0.58

Description：MOSFET N CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:43b620f34c70 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN6040SVT-7

Overview

The DMN6040SVT-7 is a 60V N-channel enhancement mode MOSFET in a TSOT26 package. It features a maximum drain-source on-resistance of 44mΩ at VGS=10V and 60mΩ at VGS=4.5V. The device supports a continuous drain current of 5.0A at TA=+25°C with VGS=10V, or 4.3A at VGS=5V. Total gate charge is 22.4nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features low input capacitance and fast switching speed for efficient operation.
Qualified to JEDEC standards for high reliability and tested 100% for Unclamped Inductive Switch (UIS) capability.

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit Tape & Reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance requirements if restricted substances are a constraint for the target assembly process.

Selection Notes

Select this component when a single N-channel MOSFET with a 60V breakdown voltage is required. Ensure the application gate drive voltage aligns with the specified RDS(ON) thresholds of 10V or 4.5V to achieve the desired conduction losses. Verify thermal management capabilities against the specified junction-to-ambient resistance values.

Part Context

This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 surface-mount package. The device is distinct from automotive-compliant variants which carry separate datasheet designations.