DMN6040SVTQ-13

$0.54

Description：MOSFET N-CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ddde9417333d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN6040SVTQ-13

Overview

The DMN6040SVTQ-13 is a 60V N-channel enhancement mode MOSFET in a TSOT26 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at 25°C. The on-resistance is 44mΩ at VGS=10V and 60mΩ at VGS=4.5V. Gate threshold voltage ranges from 1V to 3V, with a total gate charge of 22.4nC at VGS=10V. Operating temperature spans -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability applications
100% Unclamped Inductive Switch (UIS) tested in production
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets automotive quality requirements by checking for explicit AEC-Q101 qualification status and PPAP capability before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring low on-state resistance combined with fast switching performance. Ensure the application operates within the specified 60V drain-source voltage limit and 5.0A continuous current rating. Consider thermal management strategies given the power dissipation constraints in the TSOT26 package.

Part Context

This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching characteristics for efficient power management solutions.

Replacement Considerations

Consult official datasheets for alternative part numbers within the same series or family that offer compatible pinouts and electrical parameters. Verify package compatibility and thermal performance when evaluating substitutes.