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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMN6041SVTQ-13 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It features a TSOT26 package with low on-resistance of 48mΩ at VGS=10V and 60mΩ at VGS=4.5V. The device supports continuous drain currents of 4.1A at +25°C and 3.3A at +70°C, with a maximum gate-source voltage of ±20V. Total power dissipation reaches 0.9W in steady state, while thermal resistance junction-to-ambient is 138°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- 100% Unclamped Inductive Switch (UIS) tested in production
- Low input capacitance and fast switching speed characteristics
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC converters
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix (-13 indicates 10,000 units per tape and reel) against project requirements. Confirm that the TSOT26 package dimensions align with PCB layout constraints. Ensure compliance with IATF 16949 manufacturing facility standards if required by automotive supply chain protocols. Check for any specific change control documentation associated with AEC-Q101 qualification.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade N-channel MOSFETs with low on-resistance. Consider the TSOT26 package size for space-constrained layouts. Evaluate thermal performance based on the specified junction-to-ambient resistance values under expected load conditions. Verify gate drive voltage compatibility with the threshold and on-resistance specifications provided.
Part Context
This part belongs to Diodes Incorporated's line of automotive-qualified MOSFETs. It is specifically engineered to meet stringent automotive reliability standards. The TSOT26 package offers a compact footprint suitable for modern electronic designs. The product summary highlights its suitability for power management and conversion tasks within vehicles.
Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with similar 60V ratings and comparable RDS(ON) values. Ensure replacement parts also meet AEC-Q101 qualifications if used in automotive contexts. Verify pinout compatibility and package dimensions to facilitate direct substitution without redesigning the PCB.
