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The DMN6066SSSQ-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at +25°C, reducing to 4.0A at +70°C. The device exhibits a typical on-resistance of 48mΩ at VGS=10V and 97mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.
Verify the specific automotive grade suffix 'Q' when ordering to ensure compliance with AEC-Q101 standards. Confirm that the SO-8 packaging matches your PCB footprint requirements. Check for any recent product change notifications regarding material composition or manufacturing location updates before finalizing procurement plans.
Select this component for applications requiring low on-resistance and fast switching speeds in power management circuits. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Consider thermal derating curves if operating above +25°C ambient temperature to maintain safe junction temperatures.
This part belongs to the DMN6066SSS series from Diodes Incorporated. It is specifically the automotive qualified version (indicated by the 'Q' suffix), sharing electrical characteristics with the commercial variant but meeting stricter reliability standards. It is designed for high-efficiency power management applications.
DMN6066SSS-13 is the commercial equivalent with identical electrical specifications but without AEC-Q101 qualification.