DMN6066SSSQ-13

DMN6066SSSQ-13

$0.96
  • Description:MOSFET BVDSS: 41V~60V SO-8 T&R 2
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:97f9a85c3476 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 41V~60V SO-8 T&R 2
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.3 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:502 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1.56W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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DMN6066SSSQ-13

Overview

The DMN6066SSSQ-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at +25°C, reducing to 4.0A at +70°C. The device exhibits a typical on-resistance of 48mΩ at VGS=10V and 97mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

  • Qualified to AEC-Q101 standards for high reliability
  • Designed to minimize on-state resistance while maintaining superior switching performance
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free green device

Applications

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Procurement Notes

Verify the specific automotive grade suffix 'Q' when ordering to ensure compliance with AEC-Q101 standards. Confirm that the SO-8 packaging matches your PCB footprint requirements. Check for any recent product change notifications regarding material composition or manufacturing location updates before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds in power management circuits. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Consider thermal derating curves if operating above +25°C ambient temperature to maintain safe junction temperatures.

Part Context

This part belongs to the DMN6066SSS series from Diodes Incorporated. It is specifically the automotive qualified version (indicated by the 'Q' suffix), sharing electrical characteristics with the commercial variant but meeting stricter reliability standards. It is designed for high-efficiency power management applications.

Replacement Considerations

DMN6066SSS-13 is the commercial equivalent with identical electrical specifications but without AEC-Q101 qualification.

DMN6066SSSQ-13DMN6066SSSQ-13
$0.96
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