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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V 60V TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：68mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：502 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMN6068LK3Q-13 is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and continuous drain currents ranging from 6.0A to 20A depending on thermal conditions. The device exhibits low on-resistance, specified as 68mΩ at VGS=10V and 100mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a TO-252 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Manufactured in IATF 16949 certified facilities
- Includes 100% Unclamped Inductive Switch (UIS) testing in production
Applications
- Motor control
- Transformer driving switches
- DC-DC converters
- Power-management functions
- Uninterrupted power supplies
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the component meets the necessary RoHS and halogen-free requirements for your assembly process. Ensure compatibility with the TO-252 footprint during PCB layout validation.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability and high current handling capabilities. Consider the thermal resistance values and safe operating area curves to ensure adequate heat dissipation under expected load conditions. Verify gate drive voltages align with the specified thresholds for optimal switching performance.
Part Context
This part belongs to the DMN6068LK3Q series, which represents Diodes Incorporated's line of automotive-qualified N-channel MOSFETs. The 'Q' suffix indicates qualification for automotive environments, while 'LK3' denotes the specific package and lead configuration. This series is engineered to meet stringent industry standards for durability and performance.
Replacement Considerations
Consult official documentation for verified substitute part numbers before implementation. Cross-referencing should focus on matching electrical parameters and package dimensions to ensure functional equivalence without compromising system integrity or safety certifications.
