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The DMN6068SE-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 5.6A at TA = +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 68mΩ at VGS = 10V and 100mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C and utilizes a SOT-223 package.
Verify the specific ordering suffix against official documentation, as variations exist between standard commercial grades and automotive-grade parts like the DMN6068SEQ. Confirm that the requested component matches the required qualification level and manufacturing facility certifications before finalizing procurement.
Select this component for designs requiring robust switching performance in automotive environments. Ensure the application accounts for the thermal resistance characteristics and derating curves provided in the datasheet to maintain safe operating temperatures under varying load conditions.
This part belongs to the DMN6068 series of N-channel MOSFETs from Diodes Incorporated. The series includes variants such as the DMN6068SEQ, which is specifically qualified for automotive use. These devices are designed to provide low on-resistance and fast switching speeds suitable for power management applications.
The DMN6068SEQ is an equivalent automotive-qualified variant within the same product family. Verify pinout compatibility and electrical specifications when substituting between different suffixes or manufacturers.
Yes, the DMN6068SEQ variant is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
The maximum gate-source voltage (VGS) is rated at ±20V for general operation, though AEC-Q101 qualified versions have a maximum rating of ±16V.