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Product Detailed Parameters
- Description：MOSFET N-CH 60V 18A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN6069SFGQ-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes the PowerDI3333-8 package, providing a compact form factor with high thermal efficiency. Key electrical parameters include a maximum on-resistance of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V. Continuous drain current reaches 18A at TC=+25°C, while total power dissipation is rated at 2.4W under specific thermal conditions.
Feature Summary
- Low on-state resistance minimizes conduction losses for improved efficiency
- PowerDI3333-8 package occupies significantly less board area than SO-8 equivalents
- Qualified to AEC-Q101 standards for automotive reliability applications
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration specified in the datasheet. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal and voltage limits to maintain device integrity.
Selection Notes
Select this component when space constraints require a footprint smaller than standard SO-8 packages without sacrificing thermal performance. The low gate charge and fast switching characteristics make it suitable for high-frequency power conversion topologies. Verify that the required gate drive voltage aligns with the specified RDS(ON) test conditions to ensure optimal conduction performance.
Part Context
This part belongs to the DMN6069 series of N-channel MOSFETs from Diodes Incorporated. It shares the same core die and electrical specifications as the DMN6069SFGQ-13 variant, differing only in the reel quantity and specific packaging designation. Both variants utilize the same PowerDI3333-8 case style and are designed for similar high-density power management applications.
Replacement Considerations
The DMN6069SFGQ-13 serves as a direct functional substitute with identical electrical characteristics and package dimensions. When replacing, verify that the new reel quantity matches the assembly line requirements. No changes to the circuit design or PCB layout are necessary due to pin-to-pin compatibility.
