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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN6069SFVWQ-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) package and is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 14A at TC = +25°C, and a static drain-source on-resistance of 69mΩ at VGS = 10V. The device supports a gate-source voltage range of ±20V and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Features wettable flanks to improve optical inspection reliability
- Includes 100% Unclamped Inductive Switching (UIS) testing in production
- Utilizes a thermally efficient small form factor package
Applications
- Power-management functions
- DC-DC converters
Procurement Notes
Verify that the specific ordering suffix matches the required packing quantity, as the DMN6069SFVWQ-13 corresponds to a 3,000-unit tape and reel carrier. Confirm compliance with RoHS 3 and halogen-free requirements if mandated by project specifications. Ensure the design accommodates the specified thermal resistance values for both ambient and case-mounted operating conditions.
Selection Notes
Select this component when designing circuits requiring AEC-Q101 qualification and automotive-grade reliability. The low on-resistance minimizes conduction losses, while the compact PowerDI3333-8 package facilitates high-density board layouts. Consider the thermal characteristics carefully, as power dissipation capabilities vary significantly between ambient and case temperature mounting scenarios.
Part Context
This part belongs to the DMN6069 series of N-channel MOSFETs from Diodes Incorporated. The series includes variants such as DMN6069SE-13 and DMN6069SFG-13, which differ primarily in packaging styles like SOT-223 or standard PowerDI configurations. The SFVWQ designation specifically denotes the wettable flank variant designed for enhanced manufacturing inspection.
Replacement Considerations
Direct substitutes include other DMN6069 series parts such as DMN6069SFVWQ-7, which shares identical electrical characteristics but differs in reel quantity.
