DMN6075S-13

$0.31

Description：MOSFET N-CH 60V 2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:979a7e4194e5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：606 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6075S-13

Overview

The DMN6075S-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a continuous drain current (ID) of 2.5 A at +25°C, with an on-state resistance (RDS(ON)) of 85 mΩ at VGS = 10 V and 120 mΩ at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 1.3 V to 2.7 V, total gate charge (Qg) of 12.3 nC at VGS = 10 V, and input capacitance (Ciss) of 606 pF. Thermal characteristics specify a power dissipation of 0.8 W at +25°C and a junction-to-ambient thermal resistance of 157 °C/W under standard conditions.

Feature Summary

Designed for high-efficiency power-management applications through minimized on-state resistance while maintaining superior switching performance.
Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green molding compound packaging.
Qualified to JEDEC standards for high reliability, suitable for demanding operational environments.

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel configuration in SOT23 packages. Confirm that the component meets the required environmental standards, including RoHS 3 compliance and the specified halogen and antimony-free definitions. Ensure the selected part aligns with the documented thermal and electrical ratings for the intended circuit design.

Selection Notes

Select this component for circuits requiring a 60 V N-channel MOSFET with low on-resistance and fast switching capabilities. Consider the 85 mΩ RDS(ON) at 10 V gate drive for optimal efficiency in power management designs. Evaluate the thermal resistance and power dissipation limits relative to the expected operating temperature range and PCB layout constraints.

Part Context

This component belongs to the DMN6075 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a SOT23 surface-mount package designed for compact electronic assemblies. The product line emphasizes low input capacitance and fast switching speeds to support modern high-frequency power conversion requirements.

Replacement Considerations

An automotive-compliant variant is available under the separate datasheet designation DMN6075SQ. Verify compatibility if automotive-grade qualification is required for the application environment.