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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：85mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：606 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN6075S-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 85mΩ at VGS=10V and 120mΩ at VGS=4.5V, with continuous drain currents of 2.5A at TA=+25°C and 2.0A at TA=+70°C. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.15W at TA=+25°C. Packaged in a SOT-23 (SC-59) surface-mount housing, it includes a body diode with a forward voltage of 1.2V at IS=2.5A.
Feature Summary
- Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
- Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green molding compound.
- Qualified to JEDEC standards for high reliability, suitable for demanding operational environments.
Applications
- DC-DC converters
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and reel specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and compliance with quality standards. Cross-reference the date code markings with current manufacturing records to validate component freshness and traceability.
Selection Notes
Select this component when designing circuits requiring low on-resistance and fast switching speeds within a compact SOT-23 footprint. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance values under different mounting conditions. Confirm that the gate-source voltage limits and breakdown ratings align with the system's operational parameters.
Part Context
This part belongs to the DMN6075 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on optimizing conduction losses while maintaining robust switching characteristics. The DMN6075S-7 variant specifically utilizes a tape-and-reel packaging format for automated assembly processes.
Replacement Considerations
An automotive-compliant version of this component is available under the separate datasheet designation DMN6075SQ. Verify package compatibility and electrical parameter alignment before substituting with other manufacturers' equivalents.
FAQ
What are the maximum ratings for Drain-Source Voltage and Gate-Source Voltage?
The maximum Drain-Source Voltage (VDSS) is rated at 60V, and the maximum Gate-Source Voltage (VGSS) is rated at ±20V.
How does the continuous drain current change with ambient temperature?
At an ambient temperature of +25°C, the continuous drain current is 2.5A. This rating decreases to 2.0A when the ambient temperature rises to +70°C.
Is the DMN6075S-7 qualified for automotive applications?
The standard DMN6075S-7 is qualified to JEDEC standards for high reliability. However, a specific automotive-compliant part is available under the separate designation DMN6075SQ.
