DMN6075SQ-13

$0.41

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:39aebacd8534 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：606 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6075SQ-13

Overview

The DMN6075SQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 2.5A at 25°C. The device exhibits a low on-resistance of 85mΩ at VGS=10V and 120mΩ at VGS=4.5V. Packaged in an SOT-23 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Designed for fast switching speeds and low input capacitance.
Manufactured using lead-free, halogen-free, and antimony-free green materials.

Applications

DC-DC converters
Power management functions
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards if deployed in vehicle systems. Ensure the selected variant aligns with the intended thermal and electrical operating conditions for the target application design.

Selection Notes

Select this component when a 60V N-channel MOSFET is required for space-constrained designs utilizing the SOT-23 package. Consider its low on-resistance characteristics for efficient power handling in portable electronics or automotive modules where high switching performance is essential.

Part Context

This part belongs to the DMN60 series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to address the rigorous demands of automotive environments while maintaining compliance with international environmental directives regarding hazardous substances.