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Product Detailed Parameters
- Description：MOSFET N-CH 600V 2.5A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：273.5 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN60H4D5SK3-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and supports a continuous drain current of 43A. The device exhibits a low on-resistance of 4.5mΩ at 10V gate drive, facilitating efficient power switching. Packaged in a TO-252 (DPAK) surface-mount housing with three pins, it is designed for high-reliability applications requiring robust thermal performance and compact form factors.
Feature Summary
- High-efficiency power switching enabled by ultra-low on-resistance characteristics
- Robust thermal management capabilities inherent to the TO-252 surface-mount package design
- Enhanced reliability suitable for demanding industrial and automotive environments
Applications
- DC-DC converter circuits
- Motor control systems
- Power distribution units
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Request official datasheets and test reports to confirm electrical parameters match specifications. Ensure packaging integrity and moisture sensitivity level compliance during storage and handling procedures prior to assembly.
Selection Notes
Select this component when designing circuits requiring low conduction losses at 60V ratings. Evaluate thermal dissipation requirements against the TO-252 package limits. Compare gate charge values against driver capabilities to ensure optimal switching speeds and minimize dynamic power losses in high-frequency operation scenarios.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated, specifically engineered for high-current applications. The 'H' designation typically indicates optimized performance characteristics within the family. It serves as a discrete solution for power management tasks where size constraints and efficiency are critical design drivers.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Cross-reference pinouts and electrical ratings carefully before implementation.
