DMN60H80DHFF-7

DMN60H80DHFF-7

  • Description:MOSFET N-CH 600V 80MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:faaa1ad1d4f8 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 80MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
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  • Drive Voltage (Max Rds On, Min Rds On):-
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  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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DMN60H80DHFF-7

Overview

The DMN60H80DHFF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage range of 41V to 60V and utilizes the PowerDI 5060 package for surface mount applications. The device is designed for high-efficiency switching in power management circuits, offering low on-resistance characteristics suitable for DC-DC converters and load switch implementations.

Feature Summary

  • Single N-channel enhancement mode configuration
  • Surface mount PowerDI 5060 package design
  • Optimized for low on-resistance performance

Applications

  • DC-DC converter output stages
  • Load switch implementations
  • Power management integrated circuits

Procurement Notes

Verify the specific datasheet revision and electrical parameter limits directly from the manufacturer's official documentation before integration. Confirm that the PowerDI 5060 footprint matches the target PCB layout requirements. Ensure thermal management strategies align with the component's power dissipation specifications under expected operating conditions.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage switching applications. The PowerDI 5060 package offers a balance between current handling capability and board space efficiency. Consider the specific Rds(on) and thermal resistance values relative to the system's heat dissipation capabilities during the design phase.

Part Context

This part belongs to Diodes Incorporated's discrete semiconductor lineup, specifically within the MOSFET category. It is engineered for general-purpose switching tasks in consumer electronics and industrial equipment where space constraints and switching efficiency are critical design factors.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.

DMN60H80DHFF-7DMN60H80DHFF-7

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