DMN6140L-7

$0.29

Description：MOSFET N-CH 60V 1.6A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c7adfdf0a0e6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 1.6A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6140L-7

Overview

The DMN6140L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source breakdown voltage (V(BR)DSS) of 60 V and a gate-source voltage rating of ±20 V. The device supports a continuous drain current of 2.3 A at +25°C with a maximum on-resistance (RDS(on)) of 140 mΩ at VGS = 10 V. Total gate charge is 8.6 nC, with turn-on delay time of 2.6 ns and turn-off delay time of 16.3 ns. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the ordering suffix matches the required reel quantity. The DMN6140L-7 designation corresponds to a 3,000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a 60 V N-channel MOSFET with low RDS(on) is required in a compact SOT-23 footprint. Ensure the application operates within the specified thermal limits and voltage ratings. Verify compatibility with the intended PCB layout and thermal dissipation strategy for optimal performance.

Part Context

This part belongs to the DMN6140L series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring small form factors and reliable operation under varying thermal conditions.

Replacement Considerations

The datasheet does not list specific substitute part numbers. Evaluate alternatives based on matching electrical parameters such as V(BR)DSS, RDS(on), ID, and package type. Ensure any replacement maintains AEC-Q101 qualification if automotive reliability is required.