DMN6140LQ-7

$0.43

Description：MOSFET N-CH 60V 1.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79a2930f9216 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 1.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6140LQ-7

Overview

The DMN6140LQ-7 is a 60V N-channel enhancement mode MOSFET in an SOT23 package. It features a maximum drain-source on-resistance of 140mΩ at VGS=10V and 170mΩ at VGS=4.5V. The device supports a continuous drain current of 2.3A at TA=+25°C with steady-state conditions. Total gate charge is typically 8.6nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is AEC-Q101 qualified for automotive applications.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
Low input capacitance and fast switching speed optimize efficiency in power management circuits.
Qualified for automotive applications requiring specific change control, manufactured in IATF 16949 certified facilities.
Totally lead-free and fully RoHS compliant, halogen and antimony free.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if deployed in automotive systems. Ensure the procurement channel provides traceability documentation consistent with IATF 16949 manufacturing standards.

Selection Notes

Select this component for high-efficiency power management designs requiring low static resistance. Evaluate thermal constraints based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage characteristics when designing drive circuits for varying load conditions.

Part Context

This part belongs to the DMN6140LQ series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology housed in a standard SOT23 surface-mount package. The product line targets applications demanding compact footprints combined with robust electrical performance metrics.

Replacement Considerations

Consult official datasheets for cross-reference candidates. Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

Is the DMN6140LQ suitable for automotive use?

Yes, the DMN6140LQ is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.