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Product Detailed Parameters
- Description：MOSFET N-CH 60V 470MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：470mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 5V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.74 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：12.9 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：390mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN61D8L-7 is a single N-channel enhancement mode MOSFET in a SOT23 package, rated for 60V drain-source voltage and 470mA continuous drain current at 25°C. It features a maximum on-resistance of 1.8Ω at VGS=5V and 2.4Ω at VGS=3V. The device includes an internal active clamp to eliminate external Zener diodes and accepts logic-level inputs for direct driving by microcontrollers or inverters.
Feature Summary
- Integrates an internal active clamp circuit to remove the requirement for external freewheeling or Zener protection diodes when switching inductive loads.
- Accepts logic-level gate inputs, enabling direct interface with standard logic gates, inverters, and microcontroller outputs without additional level shifting.
- Consolidates multiple discrete components into a single surface-mount package to reduce printed circuit board footprint and improve system reliability.
Applications
- Switching automotive relay coils
- Driving solenoid actuators
- Controlling small DC motors
- Managing door, window, and antenna mechanisms
Procurement Notes
Verify that the specific part number suffix matches the required packaging configuration, as Diodes Incorporated utilizes distinct suffixes for different reel quantities. Confirm compliance with RoHS and AEC-Q101 standards if automotive-grade reliability is mandated for the target application environment.
Selection Notes
Select this component for applications requiring a compact solution to drive inductive loads directly from logic circuits. Ensure the design accounts for the thermal resistance characteristics within the SOT23 package and verify that the logic voltage levels align with the specified gate threshold requirements for reliable switching.
Part Context
This component belongs to the DMN61 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to provide robust interfaces between sensitive control logic and higher-power inductive loads, offering a simplified alternative to traditional discrete transistor and diode configurations.
Replacement Considerations
The DMN61D8LVTQ-7 serves as a qualified automotive-compliant substitute within the same family. Verify pinout compatibility and electrical parameter alignment before substitution, as package variations may exist between standard and automotive-qualified variants.
