ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.63A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：630mA
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：12.9pF @ 12V
- Power - Max：820mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
Download product information
Overview
The DMN61D8LVT-7 is a 60V N-channel enhancement mode MOSFET in a TSOT26 package. It features a maximum continuous drain current of 630mA at +25°C and a static drain-source on-resistance of 1.8Ω at VGS=5V. The device has a total power dissipation of 820mW and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 1.3V to 2.0V, a total gate charge of 0.74nC, and an input capacitance of 12.9pF.
Feature Summary
- Integrates an internal active clamp to eliminate the need for external Zener diodes.
- Accepts logic level inputs for direct driving by microcontrollers and logic gates.
- Replaces multiple discrete components to reduce PCB footprint.
- Qualified to AEC-Q101 standards for high reliability.
Applications
- Automotive door and window relay coils
- Antenna relay switching
- Solenoid control circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the official Diodes Incorporated datasheet. Confirm that the TSOT26 case style matches the required mechanical constraints for the target application design.
Selection Notes
Select this component when a single-chip solution for inductive load switching is required without external freewheeling diodes. Ensure the logic interface voltage aligns with the specified gate threshold characteristics. Verify thermal management requirements against the stated power dissipation limits for the intended operating environment.
Part Context
This part belongs to the DMN61D8L/LVT series of 60V N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series includes variants in SOT23 and TSOT26 packages, designed specifically for automotive applications requiring robust interfaces between sensitive logic circuits and DC relay coils.
Replacement Considerations
The DMN61D8LQ and DMN61D8LVTQ are automotive-compliant alternatives within the same family. Verify package compatibility and electrical parameter alignment before substitution.
