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Product Detailed Parameters
- Description：MOSFET N-CH 60V 380MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN61D9U-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 380mA. The device exhibits a maximum on-resistance of 2 Ohms at a gate-source voltage of 5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 540mW. Packaged in an SOT-23-3 surface-mount case, it utilizes silicon technology for standard switching applications.
Feature Summary
- Single N-channel enhancement mode configuration
- SOT-23-3 surface-mount packaging
- Silicon semiconductor technology
Applications
- General purpose switching circuits
- Low voltage power management systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status through the latest datasheet revision. Ensure the component meets all environmental operating specifications required for the target application before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring a 60V rated N-channel switch in a compact SOT-23-3 footprint. Evaluate the 2 Ohm on-resistance against circuit current requirements to ensure acceptable power loss. Verify that the 380mA continuous current rating aligns with peak load demands and thermal constraints of the design environment.
Part Context
This part belongs to the DMN61 series of N-channel MOSFETs from Diodes Incorporated. The series offers various configurations optimized for different voltage and current levels while maintaining small form factors suitable for portable electronics and general-purpose logic level switching tasks.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.
