DMN61D9U-7

$0.05

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bbe13806cced Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN61D9U-7

Overview

The DMN61D9U-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 380mA at 25°C. The device exhibits a maximum on-resistance of 2 Ohms at Vgs=5V and Id=50mA, with a gate threshold voltage of 500mV. It operates within a temperature range of -55°C to +150°C junction temperature and dissipates up to 540mW. Packaged in an SOT-23-3 surface-mount case, it has a maximum gate-source voltage rating of ±20V and a gate charge of 400pC.

Feature Summary

Single N-channel enhancement mode configuration for discrete switching applications
Robust thermal performance with high junction temperature capability
Low gate threshold voltage enabling efficient drive from low-voltage logic

Applications

General-purpose signal switching
Battery protection circuits
Load switching in portable devices

Procurement Notes

Verify component authenticity through authorized channels as the part status indicates obsolescence. Confirm RoHS compliance details via official datasheets before integration. Ensure supply chain stability due to potential discontinuation risks associated with end-of-life products.

Selection Notes

Select this component for low-current switching tasks requiring 60V blocking capability. The SOT-23-3 package suits space-constrained designs. Evaluate thermal management requirements given the 540mW power dissipation limit and 2 Ohm on-resistance characteristics under specific operating conditions.

Part Context

This part belongs to the DMN61 series of N-channel MOSFETs from Diodes Incorporated. It shares family characteristics such as silicon technology and standard enhancement mode operation. The suffix '-7' typically denotes tape and reel packaging configuration distinct from cut tape or other variants.