DMN61D9UDW-7

$0.07

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-

SKU:526d4b5bf628 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：350mA
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：28.5pF @ 30V
Power - Max：320mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN61D9UDW-7

Overview

The DMN61D9UDW-7 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 350mA at 25°C. The device exhibits a maximum on-resistance of 2 ohms at 5V gate drive with 50mA drain current. Key electrical characteristics include a gate charge of 0.4nC at 4.5V and an input capacitance of 28.5pF at 30V. It operates within a junction temperature range of -55°C to 150°C, dissipating up to 320mW in a surface-mount SOT-363 package.

Feature Summary

Dual N-channel configuration integrates two independent transistors into a single compact footprint for space-constrained designs.
Low gate charge specification facilitates efficient switching performance and reduced driver power requirements.
High thermal stability supports reliable operation across extended industrial temperature ranges.

Applications

Battery protection circuits requiring dual-channel isolation
Load switching applications in portable consumer electronics
General-purpose signal routing in mobile devices

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging variants. Confirm RoHS compliance status and AEC-Q101 qualification if automotive usage is intended. Cross-reference datasheet revisions to ensure compatibility with current manufacturing standards before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal SOT-363 envelope. Evaluate the 2-ohm on-resistance against system power loss constraints at the target operating current. Ensure the 60V breakdown voltage exceeds peak circuit voltages with adequate safety margin. Consider the low gate charge for high-frequency switching efficiency in battery-powered systems.

Part Context

This part belongs to the DMN61 series of dual MOSFET arrays from Diodes Incorporated. It shares the SOT-363 package form factor with other variants in the lineup but differs in voltage ratings and current capabilities. The series targets applications demanding multiple switching elements in a small surface-mount package for cost and space optimization.