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Product Detailed Parameters
- Description：MOSFET N-CH 60V 340MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN61D9UW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 340mA at 25°C. The device operates with a gate-source voltage range of -20V to +20V and exhibits a maximum on-resistance of 1.2 Ohms at 5V gate drive. Key switching parameters include a gate charge of 400pC, an input capacitance of 28.5pF, and rise/fall times of 1.8ns and 8.4ns respectively. It is housed in an SOT-323-3 surface-mount package with a power dissipation rating of 440mW and a junction temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel enhancement mode configuration for compact circuit integration
- High-speed switching capability characterized by low gate charge and fast transition times
- Robust thermal performance supporting operation up to 150°C junction temperature
- Low on-resistance design optimized for efficient power management applications
Applications
- Portable electronic devices requiring space-efficient switching solutions
- Battery-powered equipment utilizing low-voltage DC-DC conversion
- Signal routing and load switching in consumer electronics
- General-purpose high-side or low-side switching circuits
Procurement Notes
Verify the specific suffix 'W-13' against official Diodes Incorporated documentation to confirm packaging details and compliance status. Confirm availability status as distribution channels may indicate limited supply or end-of-life phases. Ensure the ordering part number matches the exact electrical specifications required for the target application before finalizing procurement orders.
Selection Notes
Select this component when a single N-channel MOSFET with 60V rating and SOT-323 footprint is required. Compare on-resistance and gate charge values against alternative parts to ensure compatibility with existing driver circuits. Verify that the 340mA continuous current rating meets the peak and steady-state load requirements of the specific application design.
Part Context
This component belongs to the DMN61 series of N-channel MOSFETs from Diodes Incorporated. The series typically offers various configurations including dual-channel options and different package types such as SOT-363. The DMN61D9UW-13 specifically represents the single-channel variant in the small SOT-323 package, providing a balance between performance and board space efficiency for portable applications.
Replacement Considerations
Check for direct substitutes within the DMN61 family, such as DMN61D9UDW-7 for dual-channel needs or DMN61D9UWQ-13 for automotive-grade variants. Verify pinout compatibility and electrical parameter equivalence before substituting.
