DMN61D9UWQ-7

$0.26

Description：MOSFET N-CH 60V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0fd2086bb47b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：440mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN61D9UWQ-7

Overview

The DMN61D9UWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 2Ω at VGS = 5.0V and 340mA, or 2.5Ω at VGS = 2.5V and 300mA. Continuous drain current reaches 340mA at +25°C. Total power dissipation is rated at 320mW in steady state with a thermal resistance (RθJA) of 393°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protection up to 2kV
AEC-Q101 qualified for automotive applications

Applications

Motor controls
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure design compliance with IATF 16949 manufacturing standards. Check for RoHS 3 and halogen-free status against project specifications. Validate package dimensions against SOT323 mechanical data before finalizing procurement.

Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage switching applications. Consider its 60V breakdown voltage for general-purpose logic-level control. Evaluate the 2Ω RDS(ON) specification against load current requirements at 5V gate drive. Assess thermal performance based on the 393°C/W junction-to-ambient resistance for PCB layout optimization.

Part Context

This part belongs to the DMN61 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT323 package. The device is designed to minimize on-state resistance while maintaining superior switching performance. It is suitable for applications requiring small form factors and efficient power handling.