ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 100MA 3-DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.45 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
Download product information
Overview
The DMN62D0LFB-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 surface-mount package. It features a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 320mA at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 2Ω at V_GS = 4V and 2.5Ω at V_GS = 2.5V. Key electrical parameters include a gate threshold voltage of 1.0V max, total gate charge of 0.9nC max, and power dissipation of 0.5W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected with integrated gate protection diode
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, and Displays
Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance standards, including RoHS 3 and halogen-free requirements, prior to final procurement authorization.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V capability and low R_DS(ON) is required for space-constrained designs. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired conduction characteristics. Evaluate thermal performance against the specified junction-to-ambient thermal resistance for the intended PCB layout.
Part Context
This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN62D0LFB variant specifically utilizes the X1-DFN1006-3 package, offering a small footprint suitable for modern portable electronics and dense circuit board layouts.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and package dimensions.
