DMN62D0SFD-7

$0.34

Description：MOSFET N-CH 60V 540MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0daec3d42bbb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 540MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：430mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

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DMN62D0SFD-7

Overview

The DMN62D0SFD-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 540 mA at Ta = +25°C with Vgs = 10V. The device has a maximum on-resistance (Rds(on)) of 2 Ω at Vgs = 10V and 3 Ω at Vgs = 5V. Total power dissipation is rated at 430 mW, with an operating temperature range from -55°C to +150°C. It utilizes the X1-DFN1212-3 package.

Feature Summary

Low on-state resistance for high efficiency
Low gate threshold voltage
Low input capacitance
Fast switching speed
ESD protected gate to 2kV

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, Halogen-free, and Antimony-free requirements as specified in the manufacturer's documentation. Ensure compatibility with the X1-DFN1212-3 footprint during PCB layout design.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance and fast switching characteristics is required. Consider the 60V breakdown voltage and 540mA continuous current limits for circuit design. Evaluate thermal performance based on the 430mW power dissipation rating and the specific thermal resistance values provided in the datasheet.

Part Context

This part belongs to the DMN62D0SFD series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications and is qualified to JEDEC standards for high reliability.