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The DMN62D0U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum on-resistance (RDS(ON)) of 2Ω at VGS = 4.5V with a continuous drain current (ID) of 380mA, or 2.5Ω at VGS = 2.5V with an ID of 340mA. It operates within a temperature range of -55°C to +150°C and utilizes a SOT23 package.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance requirements. Ensure the selected part matches the required thermal and electrical specifications for the intended application environment.
Select this component when a 60V N-channel MOSFET in a compact SOT23 package is required. Consider its low input capacitance and fast switching speed for applications demanding efficient power management. Evaluate the RDS(ON) characteristics against the specific gate drive voltages available in the target circuit design.
This component belongs to the DMN62D0U series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on providing low on-resistance and high switching efficiency within small form-factor packages suitable for surface-mount technology applications.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
The maximum continuous drain current is 380mA at VGS = 4.5V and 340mA at VGS = 2.5V, measured at TA = +25°C.
Yes, the device includes an integrated gate protection diode and is ESD protected up to 1kV.