DMN62D0UDWQ-13

$0.40

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-

SKU:723da7aa3941 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：32pF @ 30V
Power - Max：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN62D0UDWQ-13

Overview

The DMN62D0UDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 350mA at +25°C. The device offers low on-resistance, specified as 2Ω max at VGS=4.5V and 2.5Ω max at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SOT363 package.

Feature Summary

Dual N-channel configuration with integrated ESD protection diodes
Qualified to AEC-Q101 standards for automotive reliability
Low gate threshold voltage enabling efficient drive control
Ultra-small surface-mount SOT363 package design

Applications

Motor control circuits
Power-management functions
Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Ensure compliance with RoHS and halogen-free requirements if mandated by project specifications. Confirm PPAP capability status directly with the manufacturer for automotive supply chain integration.

Selection Notes

Select this component when a compact dual N-channel solution is required for space-constrained designs. Consider the low input capacitance and fast switching speed for high-frequency applications. Evaluate thermal resistance characteristics relative to the intended PCB copper coverage and ambient operating conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. It is manufactured in IATF 16949 certified facilities, ensuring consistent quality for critical vehicle electronics. The product line emphasizes robust performance under stringent automotive environmental conditions.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinout compatibility and electrical parameters such as BVDSS and RDS(ON) before implementation.