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DMN62D0UT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 0.32A SOT523. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN62D0UT-7
- Description：MOSFET N-CH 60V 0.32A SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：230mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN62D0UT-7
Single FETs, MOSFETs Overview
The DMN62D0UT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT523 surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 320mA at +25°C. The device offers a maximum on-resistance of 2Ω at VGS=4.5V and 2.5Ω at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 1.0V maximum, total gate charge of 0.5nC, and input capacitance of 32pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 546°C/W on a standard FR-4 PCB.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high-efficiency power management
- Low gate threshold voltage enabling easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protection rated up to 1kV
Single FETs, MOSFETs Applications
- Motor control circuits
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and is halogen-free if required by the design specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 60V breakdown voltage. The SOT523 package is suitable for space-constrained designs. Consider the 2Ω on-resistance at low gate voltages when designing for battery-powered or low-drive logic interfaces. Verify thermal dissipation requirements against the specified junction-to-ambient resistance for the target PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the DMN62D0U series of single N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN62D0UT-7 variant specifically utilizes the SOT523 case style and is supplied in tape and reel packaging for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official documentation for confirmed substitute part numbers. Cross-referencing should be performed carefully to ensure pinout compatibility and electrical parameter equivalence.
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