DMN62D0UW-7

$0.20

Description：MOSFET N-CH 60V 340MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:27505b364cc0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN62D0UW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 340MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN62D0UW-7

Description：MOSFET N-CH 60V 340MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN62D0UW-7

DMN62D0UW-7

Single FETs, MOSFETs Overview

The DMN62D0UW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 2Ω at VGS = 4.5V with a continuous drain current (ID) of 340mA at +25°C, or 2.5Ω at VGS = 2.5V with an ID of 300mA. Total power dissipation is rated at 320mW in steady state, with a junction-to-ambient thermal resistance of 398°C/W. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features low input capacitance and fast switching speed characteristics.
Includes ESD protected gate structure and exhibits low input/output leakage currents.
Qualified to JEDEC standards for high reliability and fully RoHS compliant.

Single FETs, MOSFETs Applications

Motor controls
Power management functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the standard tape and reel packaging matches the required quantity for production integration. Ensure compliance with environmental directives such as RoHS and halogen-free requirements if mandated by the end application specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 package is required for low-voltage switching tasks. Evaluate the RDS(ON) values at relevant gate drive voltages to ensure adequate conduction efficiency. Consider the thermal resistance limits and power dissipation capabilities relative to the expected operating ambient temperatures and duty cycles.

Single FETs, MOSFETs Part Context

This part belongs to the DMN62D0UW series of N-channel enhancement mode MOSFETs. It is distinct from automotive-compliant variants like the DMN62D0UWQ. The device utilizes silicon technology and is housed in a molded plastic SOT323 package with matte tin annealed terminals over an alloy leadframe.