DMN62D1LFB-7B

$0.30

Description：MOSFET N-CH 60V 320MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e7118555305c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：64 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

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DMN62D1LFB-7B

Overview

The DMN62D1LFB-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a gate-source voltage (V_GSS) rating of ±20 V. The device provides a continuous drain current (I_D) of 407 mA at +25°C, with a static drain-source on-resistance (R_DS(ON)) of 2 Ω at V_GS = 4 V and 2.5 Ω at V_GS = 2.5 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 0.5 W. The component is housed in an X1-DFN1006-3 surface-mount package.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Includes integrated ESD protection and a built-in gate protection diode to enhance circuit reliability.
Constructed using lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm the reel size and tape width specifications. Ensure the procurement channel is authorized to maintain product integrity and access valid datasheets. Confirm compliance requirements such as RoHS 3 and REACH status directly from the manufacturer's quality statements before finalizing orders.

Selection Notes

Select this component when a compact N-channel MOSFET with a 60 V breakdown voltage is required for low-current switching tasks. The X1-DFN1006-3 package offers a small footprint suitable for space-constrained designs. Evaluate the R_DS(ON) values at your specific gate drive voltages to ensure adequate conduction efficiency for your load requirements.

Part Context

This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities in miniature packages. The DMN62D1LFB variant specifically utilizes the X1-DFN1006-3 case style, distinguishing it from other members of the family that may use different physical footprints or pin configurations.

Replacement Considerations

Consult the official Diodes Incorporated datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying electrical parameters and pinout definitions.