DMN62D1LFD-13

$0.31

Description：MOSFET N-CH 60V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d45c7ed0f99 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4V
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

Download product information

DMN62D1LFD-13

Overview

The DMN62D1LFD-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN1212-3 package and operates with a drain-source voltage of 60V. The device provides a continuous drain current of 400mA at +25°C, reducing to 310mA at +70°C. Static drain-source on-resistance is specified as 2Ω at VGS=4V and 2.5Ω at VGS=2.5V. Power dissipation is rated at 0.5W with a thermal resistance of 237°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected structure with integrated gate protection diode
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the U-DFN1212-3 (Type C) case material meets UL Flammability Classification Rating 94V-0 requirements for your design. Ensure compliance with JEDEC standards for high reliability applications if required.

Selection Notes

Select this component when a compact N-channel MOSFET with 60V rating and low on-resistance is needed. The U-DFN1212-3 package suits space-constrained designs. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between VGS=4V and lower voltages like 1.8V or 2.5V based on electrical characteristics.

Part Context

This part belongs to the DMN62D1L family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical specifications with other variants in the series but differs in packaging and ordering suffixes. The standard version is distinct from automotive-grade parts which carry a Q-suffix and require AEC-Q qualification.