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Product Detailed Parameters
- Description：MOSFET N-CH 60V 400MA 3DFN T&R 1
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN1212-3
- Package / Case：3-XDFN
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Overview
The DMN62D1LFDQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 60V and low on-resistance, specified as 2Ω at VGS=4V with ID=100mA, or 2.5Ω at VGS=2.5V with ID=50mA. The device supports a continuous drain current of 400mA at +25°C and 350mA at +70°C. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN1212-3 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
- ESD protected structure
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the U-DFN1212-3 package type matches your PCB footprint requirements. Ensure the component meets the necessary IATF 16949 certification standards if your application demands strict automotive change control protocols. Cross-reference the date code marking for production year verification.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V rating is needed for low-current switching tasks. The U-DFN1212-3 package offers a small form factor suitable for space-constrained designs. Consider the thermal resistance characteristics and power dissipation limits when designing heat management solutions. Verify gate threshold voltage compatibility with your driving logic levels.
Part Context
This part belongs to Diodes Incorporated's line of automotive-grade MOSFETs. It is manufactured in IATF 16949 certified facilities to ensure quality consistency. The DMN62D1LFDQ series is engineered to meet stringent automotive reliability standards. It serves as a solution for power management in vehicles requiring robust performance in small packages.
Replacement Considerations
Check datasheets for other DMN62D1 variants to confirm pinout and electrical parameter compatibility. Verify package dimensions match the U-DFN1212-3 specification exactly. Ensure any substitute also holds AEC-Q101 qualification if automotive compliance is mandatory.
