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The DMN62D2UDM-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage (BVDSS) and operates with a gate-source voltage range of ±20V. The device is housed in an SOT-363 surface-mount package, which integrates two independent channels within a compact footprint designed for space-constrained applications.
Verify the specific suffix against official Diodes Incorporated documentation to confirm package type and tape-and-reel specifications. Ensure that the ordering information matches the required quantity increments and packaging format defined in the manufacturer's datasheet before finalizing procurement orders.
Select this component when a dual N-channel topology is required within a minimal board area. The SOT-363 package offers a smaller footprint compared to discrete single-channel alternatives. Confirm that the 60V rating aligns with the maximum circuit voltages and that the thermal characteristics meet the application's power dissipation requirements.
This part belongs to the DMN62 series of dual MOSFETs from Diodes Incorporated. The series provides integrated solutions for applications needing multiple switching elements. The DMN62D2UDM-7 variant specifically utilizes the SOT-363 package, distinguishing it from other series members that may use different form factors or pin configurations.
Consult the official Diodes Incorporated cross-reference list for verified substitutes. Ensure any replacement maintains the same dual N-channel architecture, 60V rating, and compatible package dimensions to preserve mechanical fit and electrical performance.