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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.34A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN62D2UDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 340mA at +25°C. The device offers low on-resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Packaged in an ultra-small SOT363 surface-mount housing, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single ultra-small SOT363 package
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low gate threshold voltage enabling efficient drive at reduced gate voltages
- Fast switching speed combined with low input capacitance and leakage
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, prior to final procurement decisions.
Selection Notes
Select this component when designing circuits requiring dual N-channel MOSFETs within strict space constraints. Ensure the application operates within the specified 60V breakdown voltage and 340mA continuous current limits. Verify that the driving circuitry can provide sufficient gate voltage to achieve the desired on-resistance levels.
Part Context
This part belongs to the DMN62DU series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered specifically to meet the stringent reliability and quality requirements of the automotive industry, utilizing advanced silicon technology for high performance.
Replacement Considerations
Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on pinout or general electrical ratings without verifying specific parameter tolerances and package dimensions.
FAQ
Is the DMN62D2UDWQ suitable for automotive environments?
Yes, the device is qualified to AEC-Q101 standards and is capable of PPAP submission for automotive applications.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Does the package include ESD protection?
Yes, the device includes internal gate protection diodes and is explicitly described as ESD protected.
