DMN62D2UT-7

$0.04

Description：2N7002 FAMILY SOT523 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:46d4a62662de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT523 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：334mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN62D2UT-7

Overview

The DMN62D2UT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 334mA at 25°C, with an on-state resistance (RDS(ON)) of 2.0Ω at VGS=5.0V. Packaged in a compact SOT523 surface-mount format, it includes internal gate protection diodes and meets RoHS standards.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Integrated ESD protection up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives and quality standards required for the intended application before finalizing procurement.

Selection Notes

Select this component when a small form factor is required alongside moderate current handling capabilities. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired RDS(ON) levels, particularly at lower drive voltages such as 1.8V or 2.5V.

Part Context

This part belongs to the DMN62 series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for applications requiring high reliability and compliance with JEDEC standards.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, package dimensions, and electrical characteristics.