DMN62D2UTQ-13

$0.04

Description：2N7002 FAMILY SOT523 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5adeb8c575eb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT523 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：334mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN62D2UTQ-13

Overview

The DMN62D2UTQ-13 is a 60V N-channel enhancement mode MOSFET in an SOT523 package. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current (ID) reaches 334mA at TA=+25°C. Total power dissipation is rated at 0.4W to 0.5W depending on mounting conditions.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features low on-resistance and low gate threshold voltage for efficient switching.
Includes integrated ESD protection diode up to 2kV.
Manufactured using lead-free, halogen-free, and antimony-free green materials.

Applications

Motor controls
Power management functions

Procurement Notes

Verify the specific ordering suffix (-13 indicates 10,000 units per tape and reel) against project requirements. Confirm that the component meets AEC-Q101 qualification and IATF 16949 manufacturing standards if automotive compliance is mandatory. Ensure design accounts for the specified thermal resistance and power dissipation limits under intended operating conditions.

Selection Notes

Select this component for designs requiring a compact SOT523 footprint with automotive-grade reliability. Consider the low input capacitance and fast switching speeds for high-frequency applications. Evaluate the gate threshold voltage range to ensure compatibility with the driving logic levels used in the target circuit design.

Part Context

This part belongs to the DMN62D series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements. The device utilizes silicon technology and is housed in a molded plastic SOT523 package suitable for surface mount assembly.

Replacement Considerations

Consult official datasheets for cross-reference candidates within the same family or equivalent specifications. Verify pinout compatibility and electrical parameters before substitution.