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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.45A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN62D2UV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a temperature range of -55°C to +150°C. The device provides low on-state resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 450mA at 25°C. Packaged in an SOT563 surface-mount format, it includes integrated gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Low on-state resistance optimized for high-efficiency power management
- Fast switching speed supported by low input capacitance
- ESD protected and fully RoHS compliant
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging carrier. Confirm that the component meets automotive requirements if applicable, as a separate automotive-compliant part number (DMN62D2UVQ) exists under a different datasheet. Ensure compatibility with standard SMD/SMT assembly processes.
Selection Notes
Select this component for applications requiring two independent N-channel switches in a compact SOT563 package. Consider the 60V breakdown voltage and 450mA continuous current limits. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance values for your specific PCB copper layout conditions.
Part Context
This part belongs to the DMN62D2UV family of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is available in both standard and automotive-compliant variants, sharing similar electrical characteristics but differing in qualification standards.
Replacement Considerations
For automotive applications, consider the DMN62D2UVQ, which is explicitly noted as an automotive-compliant alternative under a separate datasheet. Verify pinout and package dimensions match when substituting other dual N-channel MOSFETs in the SOT563 form factor.
FAQ
Does the DMN62D2UV include internal protection components?
Yes, the equivalent circuit diagram indicates the presence of gate protection diodes for each channel.
What is the maximum operating temperature for this device?
The device supports an operating and storage temperature range from -55°C to +150°C.
Is there an automotive-grade version of this component?
Yes, an automotive-compliant part is available under the part number DMN62D2UVQ, documented in a separate datasheet.
