DMN62D2UVQ-13

Overview

The DMN62D2UVQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and low on-resistance of 2.0Ω at VGS=5.0V, supporting up to 450mA continuous drain current. The device operates within a -55°C to +150°C junction temperature range and includes integrated gate protection diodes. Packaged in an SOT563 surface-mount format with 10,000 units per tape and reel, it meets AEC-Q101 standards.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes
• AEC-Q101 qualified and PPAP capable for automotive use
• Low input capacitance and fast switching speed
• Totally lead-free and fully RoHS compliant

Applications

• Motor controls
• Power-management functions
• Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 manufacturing facility standards for your automotive supply chain. Ensure compatibility with the SOT563 footprint during PCB layout validation.

Selection Notes

Select this component when a dual N-channel solution with integrated gate protection is required in a compact SOT563 package. It is suitable for designs needing AEC-Q101 qualification and low on-resistance at standard logic gate drive voltages. Consider thermal dissipation limits based on the specific board copper area available for heat spreading.

Part Context

This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. It shares the same electrical characteristics as the DMN62D2UDW-13 but utilizes a different SOT563 package instead of SOT363. Both variants offer identical performance metrics for automotive-grade power management applications.

Replacement Considerations

The DMN62D2UDW-13 is a confirmed substitute with identical electrical specifications, differing only in the SOT363 package form factor.