DMN62D2UVQ-7

Overview

The DMN62D2UVQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates within a -55°C to +150°C temperature range. The device offers low on-resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 450mA at 25°C. Packaged in an SOT563 surface-mount format, it includes internal gate protection diodes.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes
• Qualified to AEC-Q101 standards with PPAP capability for automotive use
• Low input capacitance and fast switching speed characteristics
• Totally lead-free and fully RoHS compliant construction

Applications

• Motor controls
• Power-management functions
• Backlighting

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required automotive quality standards, including IATF 16949 manufacturing certification, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs with high voltage ratings and automotive reliability. Ensure the application logic aligns with the specified gate threshold voltages and on-resistance curves across the intended operating temperature range.

Part Context

This part belongs to the DMN62 series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered specifically for robust performance in demanding automotive environments, offering compact surface-mount solutions with standardized pin configurations.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume functional equivalence based solely on package or voltage ratings without reviewing detailed electrical parameter comparisons.