DMN62D2UVT-13

$0.07

Description：MOSFET 2N-CH 60V 0.455A TSOT26
Series：-

SKU:7e558e090d82 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.455A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：455mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：-
Qualification：-

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DMN62D2UVT-13

Overview

The DMN62D2UVT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides low on-state resistance, rated at 2.0Ω maximum at VGS=5.0V, and supports a continuous drain current of 455mA at 25°C ambient temperature. Packaged in a TSOT26 surface-mount configuration, it includes an internal body diode with a forward voltage of 1.4V maximum.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features very low gate threshold voltage and low input capacitance to facilitate fast switching speeds and efficient drive requirements.
Includes ESD protection and is fully RoHS compliant, halogen-free, and antimony-free.

Applications

General-purpose interfacing switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging carrier. Confirm that the component meets automotive compliance requirements if applicable, as a separate datasheet exists for the automotive-compliant variant (DMN62D2UVTQ). Ensure design parameters align with the standard commercial specifications provided in this document.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with a 60V rating and low RDS(ON) characteristics. Consider the TSOT26 package dimensions and thermal resistance values when designing the PCB layout. Evaluate the gate threshold voltage limits against the system's logic drive levels to ensure reliable turn-on operation under varying temperature conditions.

Part Context

This part belongs to the DMN62D2UVT series of 60V N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic TSOT26 package with tin-finished annealed copper leadframes. The product is classified as a general-purpose transistor suitable for surface mount assembly.

Replacement Considerations

An automotive-compliant version of this component is available under the part number DMN62D2UVTQ. Verify if the application requires specific automotive qualification standards before selecting this alternative.