DMN62D2UVT-7

$0.09

Description：MOSFET 2N-CH 60V 0.455A TSOT26
Series：-

SKU:e9ef2f3246d9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.455A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：455mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：-
Qualification：-

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DMN62D2UVT-7

Overview

The DMN62D2UVT-7 is a dual N-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage (BVDSS) of 60V and gate-source voltage (VGSS) of ±20V. On-resistance (RDS(ON)) is 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current (ID) reaches 455mA at 25°C. Input capacitance (Ciss) is 41pF, with total gate charge (Qg) of 0.8nC. Operating temperature range is -55°C to +150°C.

Feature Summary

Dual N-channel configuration for general-purpose interfacing switches
Optimized low on-state resistance for high-efficiency power management
Very low gate threshold voltage enabling low-voltage drive compatibility
Fast switching speed supported by low input capacitance

Applications

General-purpose interfacing switches
Power-management functions
Portable applications requiring load switching

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The '-7' suffix indicates a tape and reel carrier containing 3,000 units. Confirm that the TSOT26 package dimensions align with the target PCB footprint. Ensure the component meets RoHS and halogen-free requirements if mandated by the design specifications.

Selection Notes

Select this component when a dual N-channel MOSFET is required within a compact TSOT26 footprint. Evaluate the RDS(ON) values against the expected gate drive voltage to ensure adequate conduction performance. Verify that the 60V breakdown voltage exceeds the maximum circuit stress. Consider the thermal resistance characteristics for the intended operating environment.

Part Context

This part belongs to Diodes Incorporated's DMN series of surface-mount MOSFETs. It utilizes silicon technology and is housed in a molded plastic TSOT26 package. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management applications.