DMN62D2UW-13

$0.04

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:adc3214cc947 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：391mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN62D2UW-13

Overview

The DMN62D2UW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a temperature range of -55°C to +150°C. The device utilizes a SOT323 surface-mount package. Key electrical parameters include a maximum on-resistance of 2.0Ω at VGS=5.0V, a gate threshold voltage of up to 1.0V, and a total gate charge of 0.8nC. Continuous drain current reaches 391mA at 25°C ambient temperature.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Includes integrated gate protection diode and is fully ESD protected.
Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The -13 suffix indicates a tape and reel quantity of 10,000 units in the SOT323 package. Confirm that the required packaging format aligns with automated assembly equipment specifications. Ensure compliance with applicable environmental regulations such as RoHS 3 when sourcing this component.

Selection Notes

Select this component for applications requiring low input capacitance and fast switching speeds. The SOT323 package is suitable for space-constrained designs. Evaluate thermal resistance characteristics based on the specific PCB copper area and mounting conditions. Verify that the gate drive voltage meets the requirements for optimal on-resistance performance.

Part Context

This part belongs to the DMN62D2UW series of 60V N-channel enhancement mode MOSFETs from Diodes Incorporated. The product line focuses on minimizing on-state resistance without compromising switching speed. The DMN62D2UW variant specifically utilizes the SOT323 package configuration for surface-mount technology integration.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMN62D2UWQ. Verify package compatibility and electrical parameter alignment when considering alternative suppliers or pin-compatible substitutes.