DMN62D2UW-7

$0.04

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:94d3008f2b61 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：391mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN62D2UW-7

Overview

The DMN62D2UW-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-state resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current (ID) reaches 391mA at TA=+25°C. Total power dissipation is rated at 0.4mW to 0.6mW depending on the PCB layout. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
Includes integrated gate protection diode and ESD protection capabilities.
Manufactured using totally lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a packing quantity of 3,000 units in tape and reel format. Confirm that the required component matches this packaging specification before placing orders to ensure compatibility with automated assembly equipment.

Selection Notes

Select this component for designs requiring a 60V N-channel MOSFET in an SOT323 package. Evaluate thermal constraints carefully as power dissipation is limited to approximately 0.4mW or 0.6mW based on copper pad area. Ensure gate drive voltages align with the specified RDS(ON) characteristics for optimal efficiency.

Part Context

This part belongs to the DMN62D2UW series of 60V N-channel enhancement mode MOSFETs. It is designed to balance low on-resistance with fast switching speeds. An automotive-compliant version of this component is available under the separate datasheet designation DMN62D2UWQ.

Replacement Considerations

An automotive-compliant substitute is available under the part number DMN62D2UWQ. Verify if automotive qualification is required for the application before selecting this alternative.